s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s ( v ) = - 20v i d = - 4.7a ( v g s = - 4.5v ) r d s ( o n ) 39m ( v g s = - 4.5v ) r d s ( o n ) 52m ( v g s = - 2.5v ) r d s ( o n ) 68m ( v g s = - 1.8v ) g s d 2 3 1 a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol 5 s ec s teady s tate uni t dr ai n- s our c e v ol tage v d s g ate- s our c e v ol tage v g s conti nuous dr ai n cur r ent t a = 25 - 4.7 - 3.7 t a = 70 - 3.8 - 2.9 p ul s ed dr ai n cur r ent i d m p ow er di s s i pati on t a = 25 1.25 0.75 t a = 70 0.8 0.48 t her m al res i s tanc e.j unc ti on- to- a m bi ent t 5 s ec s teady s tate t her m al res i s tanc e.j unc ti on- to- f oot r t h jf j unc ti on t em per atur e t j s tor age t em per atur e range t st g w r t h ja - 20 8 i d v /w a - 20 p d 100 166 50 150 - 55 to 150 p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h p-cha nne l mo s f e t si2 3 2 3 ds-hf ( k i 2 3 2 3 d s - h f) 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 3 unit: mm sot-23-3 1 . 6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 1 . gate 2 . source 3 . drain
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = - 250 a , v g s = 0v - 20 v v d s = - 16v , v g s = 0v - 1 v d s = - 16v , v g s = 0v , t j = 55 - 10 g ate- b ody l eak age c ur r ent i g s s v d s = 0v , v g s = 8v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s i d = - 250 a - 0.4 - 1.0 v v g s = - 4.5v , i d = - 4.7a 39 v g s = - 2.5v , i d = - 4.1a 52 v g s = - 1.8v , i d = - 2a 68 o n s tate dr ai n c ur r ent i d ( o n ) v g s = - 4.5v , v d s = - 5v - 20 a f or w ar d t r ans c onduc tanc e g fs v d s = - 5v , i d = - 4.7a 16 s input capac i tanc e c i ss 1020 o utput capac i tanc e c o ss 191 rev er s e t r ans fer capac i tanc e c r ss 140 t otal g ate char ge q g 12.5 19 g ate s our c e char ge q g s 1.7 g ate dr ai n char ge q g d 3.3 t ur n- o n del ay t i m e t d ( o n ) 25 40 t ur n- o n ri s e t i m e t r 43 65 t ur n- o ff del ay t i m e t d ( o f f ) 71 110 t ur n- o ff f al l t i m e t f 48 75 5 s ec - 1.0 s teady s tate - 0.6 di ode f or w ar d v ol tage v s d i s = - 1.0a , v g s = 0v - 0.7 - 1.2 v m ax i m um b ody - di ode conti nuous cur r ent i s a pf nc v g s = - 4.5v , v d s = - 10v , r l = 10 ,r g e n = 6 i d = - 1.0a * 1 ns v g s = 0v , v d s = - 10v , f= 1m hz * 1 v g s = - 4.5v , v d s = - 10v , i d = - 4.7a * 1 z er o g ate v ol tage dr ai n cur r ent i d s s a m r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e * 1p ul s e tes t: p w 300u s duty c y c l e 2% . mar k ing m ar k i ng d3* f p-cha nne l mo s f e t si2 3 2 3 ds-hf ( k i 2 3 2 3 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m os f e t ty pic al c har ac t er is it ic s 0 300 600 900 1200 1500 1800 0 4 8 12 16 20 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 0.00 0.03 0.06 0.09 0.12 0.15 0 4 8 12 16 20 0 4 8 12 16 20 0 1 2 3 4 5 0 1 2 3 4 5 0 3 6 9 12 15 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 v g s = 5 t hr u 2 . 5 v 25 c c r s s c o s s c i s s v d s = 6 v i d = 4 . 7 a v g s = 4 . 5 v i d = 4 . 7 a v g s = 4 . 5 v v g s = 2 . 5 v 1 v 125 c 1 . 5 v s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o gate charge on-resistance vs. drain current v d s - drain - to - s our c e v o l ta g e ( v ) - drain current (a) i d v g s - ga te - to - s ou r ce v o l ta g e ( v ) - drain current (a) i d - ga te - to - s our c e v o l ta g e ( v ) q g - t o t a l g a t e charg e ( n c ) v d s - drain - to - s ou r ce v o l ta g e ( v ) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - j u n c t i o n t emper a t u r e ( c) (normalized) - on-resistance ( r ds(on) ) v g s = 1 . 8 v 2 v t c = -55 c p-cha nne l mo s f e t si2 3 2 3 ds-hf ( k i 2 3 2 3 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m os f e t . ty pic al c har ac t er is it ic s -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 i d = 1 4 0 a 1.0 1.2 0.00 0.03 0.06 0.09 0.12 0.15 0 1 2 3 4 5 0.1 10 20 i d = 4 . 7 a 0.01 0 1 6 12 2 4 10 600 0.1 0.0 0.2 0.4 0.6 0.8 t j = 1 5 0 c threshold v oltage v arian c e ( v ) v gs(th) t j - t empe r a t u r e ( c) p owe r ( w ) e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s single pulse power - on-resistance ( r ds(on) ) v s d v ) v ( e g a t l o v n i a r d - o t - e c r u o s - g s - ga te - to - s ou r ce v o l ta g e ( v ) - source current (a) i s t im e (s e c ) 8 10 100 t a = 2 5 c 1 t j = 2 5 c safe operating area v d s - drain - to - s ou r ce v o l ta g e ( v ) 100 1 0.1 1 10 100 0.01 10 t a = 2 5 c s ingl e p u l s e - drain current (a) i d p ( t ) = 1 0 dc 0.1 i d m limited i d ( o n ) limited r d s ( o n ) lim i t e d bv d s s lim i t e d p ( t ) = 1 p ( t ) = 0 . 1 p ( t ) = 0 . 0 1 p ( t ) = 0 . 0 0 1 p ( t ) = 0 . 0 0 0 1 i d = 2 a p-cha nne l mo s f e t si2 3 2 3 ds-hf ( k i 2 3 2 3 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 5 m o s f e t ty pic al c har ac t er is it ic s normalized thermal t ransient impedance, junction-to-ambient s q u a r e w a v e p u l s e du r a t i o n ( s e c ) norm a l i z e d e f f e c t i v e t r a n s i e n t t herm a l i mped a n c e 2 1 0.1 0.01 10 - 3 10 - 2 0 0 6 0 1 1 10 - 1 10 - 4 d u t y c y c l e = 0 . 5 0.2 0.1 0.05 0.02 s ing l e p u l s e 100 1. duty cycle, d = 2. per unit base = r t h j a = 120 c/w 3. t j m - t a = p d m z t h j a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m p-cha nne l mo s f e t si2 3 2 3 ds-hf ( k i 2 3 2 3 d s - h f)
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